MOSFET N-CH Transistor


16SAR

19 in stock

Description

N-channel 600 V STP24N60M6

Configuration

Applications

  • Switching applications
  • LLC converters
  • Boost PFC converters

Features

  • Reduced switching losses
  • Lower RDS(on) per area vs previous generation
  • Low gate input resistance
  • Zener-protected

Max. parameters

Symbol parameter value Unit
VGS Gate source voltage +,- 25 V
ID Drain current 17 A
IDM Drain current pulsed 52.5 A
Ptot Total power dissipation 130 W
RDS on drain-source on resistance 190 m ohm
VDS Drain-source voltage 600 V

Reviews

There are no reviews yet.

Be the first to review “MOSFET N-CH Transistor”